Silicon Atom doped Mono layer InN; a DFT Study

International Journal of Material Science and Engineering

© 2020 by SSRG - IJMSE Journal

Volume 6 Issue 1

Year of Publication : 2020

Authors : Jawed Ali, Irfan Ahmed, Abdul Sattar Larik, Mukhtiar Ahmed Mahar

10.14445/23948884/IJMSE-V6I1P101

How to Cite?

Jawed Ali, Irfan Ahmed, Abdul Sattar Larik, Mukhtiar Ahmed Mahar, "Silicon Atom doped Mono layer InN; a DFT Study," SSRG International Journal of Material Science and Engineering, vol. 6,  no. 1, pp. 1-4, 2020. Crossref, https://doi.org/10.14445/23948884/IJMSE-V6I1P101

Abstract:

The electronic and optical parameters of monolayer Indium Nitride (InN) are modified by Silicon (Si) atom substitution using first-principles DFT. Si atom doping (with varying concentration) causes the graphene like Dirac cone of InN to move up or down the Fermi Energy (EF) level or induces some energy gap at high symmetric K-point depending upon Si atom concentration. The overall absorption spectrum shows reduced strength; however the static reflectivity of InN is improved after Si atom substitution in its lattice

Keywords:

Grapheme, Electronic structures, InN co-doping, Absorption, Reflectivity.

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