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Effect of Base Thickness on the Performance of a Polycrystalline Silicon-Based Semiconductor Radial N/P Junction Solar Cell in the Static Regime under Monochromatic Illumination

International Journal of Applied Physics
© 2023 by SSRG - IJAP Journal
Volume 10 Issue 3
Year of Publication : 2023
Authors : Aboubacar Savadogo, Bernard Zouma, Ramatou Konate, Cyrille Constant Moyenga, Raguilignaba Sam
10.14445/23500301/IJAP-V10I3P105

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How to Cite?

Aboubacar Savadogo, Bernard Zouma, Ramatou Konate, Cyrille Constant Moyenga, Raguilignaba Sam, "Effect of Base Thickness on the Performance of a Polycrystalline Silicon-Based Semiconductor Radial N/P Junction Solar Cell in the Static Regime under Monochromatic Illumination," SSRG International Journal of Applied Physics, vol. 10,  no. 3, pp. 1-5, 2023. Crossref, https://doi.org/10.14445/23500301/IJAP-V10I3P105

Abstract:

In this work, the importance of the base thickness on the performances of a radial n/p junction solar cell-based polycrystalline silicone is shown. Thus, from a theoretical study under monochromatic illumination in a static regime, we established new analytical expressions of electrical parameters. By simulations on Mathcad 15 software with photocurrent-photovoltage (J/V) and power-photovoltage (P/V) characteristics, we were able to extract the numerical values of maximum power, photovoltage, photocurrent, short-circuit photocurrent, the open-circuit photovoltage, fill factor, optimum load resistance and conversion efficiency (n) for different thicknesses of the base. The analysis clearly shows that unlike the resistance, which decreases, the other parameter values increase with the increase of the base thickness. The short circuit photocurrent density (jphcc) is more sensitive to the thickness H, with an increase of 87% observed. When H increases from 30 to 150 µm, the jphcc goes from 21.989 to 41.161 mA/cm2 . This leads to an improvement in the efficiency Ƞ of the cell, which goes from 9.33% to 21.41% for a thickness of 150µm of the base. Therefore, the optimum thickness for a polycrystalline silicon radial n/p junction solar cell is about 150µm for a wavelength of 1000nm (for Rb=50 µm, Sb =2.102 cm/s, Ln =50 µm, Dn =26 cm2 /s)

Keywords:

Efficiency, Fill factor, Photocurrent-Photovoltage (J/V), Power-Photovoltage (P/V), Radial junction solar cell.

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