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Volume 13 | Issue 6 | Year 2026 | Article Id. IJECE-V13I6P112 | DOI : https://doi.org/10.14445/23488549/IJECE-V13I6P112

An Investigation on Performance Enhancement of GaAs Solar Cells Using an Al0.41Ga0.59As Window Layer


Jhilirani Nayak, Pankaj Prusty, Priyabrata Pattanaik, Dilip Kumar Mishra

Received Revised Accepted Published
13 Mar 2026 12 Apr 2026 11 May 2026 27 Jun 2026

Citation :

Jhilirani Nayak, Pankaj Prusty, Priyabrata Pattanaik, Dilip Kumar Mishra, "An Investigation on Performance Enhancement of GaAs Solar Cells Using an Al0.41Ga0.59As Window Layer," International Journal of Electronics and Communication Engineering, vol. 13, no. 6, pp. 145-153, 2026. Crossref, https://doi.org/10.14445/23488549/IJECE-V13I6P112

Abstract

Gallium Arsenide (GaAs) single-junction solar cells lead in advanced photovoltaic research due to its high absorption coefficients, favourable high bandgap, and strong potential for high conversion efficiency. This paper presents numerical simulation and performance optimization of an AlGaAs window layer-based heterojunction solar cell incorporated with Al0.41Ga0.59As front passivation layer, n+- GaAs carrier injection layer, a p-GaAs absorber layer, a p-Al0.41Ga0.59As Back Surface Field (BSF) layer, and a p+-GaAs interface layer. The aluminum composition of 41% is selected in order to achieve optimal band alignment and reduced recombination losses. The wide-bandgap AlGaAs layers are used at the front and rear interfaces in order to enhance carrier collection, zero-bias current density, and no-load voltage. The n++/p polarity exhibits higher electron mobility, results in a simulated zero-bias current density of 31.36mA/cm2,1.31V of no-load voltage, and a output power quality factor of 83.31%. The optimized device achieves a peak photovoltaic conversion efficiency of 34.38% under 1.5G illumination.

Keywords

High-Efficient Photovoltaic Cell, SCAPS, AlGaAs Window Layer, n+/p Cell, Back Surface Field Layer.

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