Modeling and Simulation of p-Silicon and n-Silicon Polycrystalline Piezoresistive Pressure Sensors: A Comparative Study

International Journal of Electronics and Communication Engineering

© 2025 by SSRG - IJECE Journal

Volume 12 Issue 12

Year of Publication : 2025

Authors : L. Bobinson Singha, Maibam Sanju Meetei

10.14445/23488549/IJECE-V12I12P112

How to Cite?

L. Bobinson Singha, Maibam Sanju Meetei, "Modeling and Simulation of p-Silicon and n-Silicon Polycrystalline Piezoresistive Pressure Sensors: A Comparative Study," SSRG International Journal of Electronics and Communication Engineering, vol. 12,  no. 12, pp. 147-153, 2025. Crossref, https://doi.org/10.14445/23488549/IJECE-V12I12P112

Abstract:

This study shows a comparative analysis of p-type and n-type Polycrystalline Silicon (Poly-Si) piezoresistive pressure sensors using COMSOL Multiphysics simulation and analytical modeling. The novelty of this study is to study the sensitivity, polarity, linearity, and output span of the sensors with p-type and n-type poly-Si with a doping concentration of 1018cm-3. The poly-Si-based piezoresistive sensors change their majority charge carrier mobility when deformation occurs. They are also highly compatible with micromachining processes. Therefore, poly-Si-based piezoresistive sensors are widely used in MEMS applications. The p-type and n-type poly-Si with a concentration of 1×10¹⁸ cm⁻³ is used as the sensing material. The mechanical structure used in this study is a cantilever beam with applied pressure on the top. The material used for the mechanical structure is Silicon (Si). A thin layer of Silicon Dioxide (SiO₂) is used as an insulating sheet between the mechanical structure and the poly-Si piezoresistive sensing layer. In Simulation, the voltage terminal is placed at the clamped side, and the ground is placed at the free end of the poly-Si layer. The analytical result and Simulation results demonstrate that both proposed sensors exhibit a highly linear resistance with applied pressure. The polarity of the sensors is positive for the p-type poly-Si-based sensor, while the polarity of the n-type poly-Si is negative. This opposite polarity is due to the presence of a majority charge carrier. The poly Si piezoresistive pressure sensors exhibit a negative slope for n-type and a positive slope for p-type for the applied pressures ranging from 0 to 100 kPa. Sensor sensitivity is found to be intensely dependent on factors such as the piezoresistive coefficient, doping concentration, electron/hole mobility, and cantilever dimensions (length, width, and thickness). The sensitivity of the simulated p-type and n-type poly-Si piezoresistive pressure sensors is 7.0 mΩ/kPa and -2.29 mΩ/kPa, respectively. The sensitivity of the analytical for p-type and n-type poly-Si piezoresistive pressure sensors is 8.4 mΩ/kPa and -2.31 mΩ/kPa, respectively.

Keywords:

Carrier mobility, Polycrystalline, Resistivity, Sensitivity, Stress.

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