Citation :

Manoj Kumar Tomar, Vimlesh Singh, Laxya, "Carbon Nanotube Field Effect Transistor based Voltage Differencing Inverting Buffered Amplifier with Enhanced Analog Performance," International Journal of Electronics and Communication Engineering, vol. 13, no. 9, pp. 74-82, 2026. Crossref, https://doi.org/10.14445/23488549/IJECE-V13I9P105

Abstract

This article describes how to develop and operate a Voltage Differencing Inverting Buffered Amplifier (CNTFET-VDIBA) using Carbon Nanotube Field Effect Transistors (CNTFETs). It utilizes the superior characteristics of CNTFETs to facilitate enhanced transconductance, a wideband range of operation, and a low power demand compared to conventional CMOS alternatives. The effect of increasing numbers of CNTs on device performance was thoroughly studied and characterized. Simulation results specify that by increasing the number of CNTs significantly improves transconductance. The proposed VDIBA, CNT has the highest transconductance of around 1.32mS, while maintaining the high BW. The 3-db BW was observed to be 7.9 GHz, enabling this proposed VDIBA to apply for high-frequency analog signals. These results demonstrate that CNTFET-based VDIBA is a feasible substitute to CMOS, providing ultra-low power consumption, scalability, and high-performance analog building blocks for future integrated circuits.

Keywords

Carbon nano tube, ABB, VDIBA, Power efficient, Low power, Current mode, CMOS.

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