Home Rehabilitation of Patient using Bioelectronics Nano-Medicine Devices and 65nm CMOS Embedded Electronics For Insulation To avoid Coronavirus Infection

International Journal of Electronics and Communication Engineering
© 2022 by SSRG - IJECE Journal
Volume 9 Issue 4
Year of Publication : 2022
Authors : Hafez Fouad, Hesham Kamel
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Citation:
MLA Style:

Hafez Fouad, and Hesham Kamel. "Home Rehabilitation of Patient using  Bioelectronics Nano-Medicine Devices and 65nm  CMOS Embedded Electronics For Insulation To  avoid Coronavirus Infection" SSRG International Journal of Electronics and Communication Engineering, vol. 9, no. 4, Apr. 2022, pp. 1-9.  Crossref, https://doi.org/10.14445/23488549/IJECE-V9I4P101

APA Style:

Hafez Fouad, & Hesham Kamel. (2022). Home Rehabilitation of Patient using  Bioelectronics Nano-Medicine Devices and 65nm  CMOS Embedded Electronics For Insulation To  avoid Coronavirus Infection. SSRG International Journal of Electronics and Communication Engineering, 9(4), 1-9. https://doi.org/10.14445/23488549/IJECE-V9I4P101

Abstract:

This paper aims to adopt nano-medicine devices with bionics (function like living organisms) in embedded systems (isolation) to allow health rehabilitation of patients at home to avoid infection with the Coronavirus. Measuring various patient's vital signals such as temperature, blood oxygen percentage, blood pressure, heartbeat, and glucose level (to pump insulin to the body to control the blood sugar level) are included in our objective. In this work, we developed a Class AB 65nm CMOS system that can be used as part of Medical IOT applications in Telemedicine and remote healthcare. Our proposed circuit has been designed and simulated using CADENCE Design Tools in TMSC 65nm CMOS technology to optimize the design and get the required specifications. This paper designed a 2.4 GHz Class AB CMOS PA with a CG driver stage followed by a CS power stage using the proposed method for WBAN applications. The simulation results showed that the proposed PA achieved a maximum PAE of 49.09% and had an average gain of 32.4 dB over the frequency of interest in Industrial, Scientific, and Medical (ISM) bands. Input Reflection Coefficient S11=-38.588 dB, Psat=15.6172 dBm Output referred compression point P1dB=11.784 dBm. The Physical layout of the proposed CMOS Class-AB Amplifier has been designed and optimized to a 0.085mm2 chip area.

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Key Words:

Bioelectronics, Wearable and Implantable Sensors, Power Amplifier, Class AB, Embedded Systems, Healthcare Monitoring, nano-medicine, Coronavirus, Internet of Things IoT, 65nm CMOS, Energy Harvest, Organic devices.