Study the Effect of Doping Concentration on the Performance of n-Type Poly-Si Cantilever Pressure Sensors
| International Journal of Electrical and Electronics Engineering |
| © 2026 by SSRG - IJEEE Journal |
| Volume 13 Issue 1 |
| Year of Publication : 2026 |
| Authors : Lukram Bobinson Singha, Maibam Sanju Meetei |
10.14445/23488379/IJEEE-V13I1P105
How to Cite?
Lukram Bobinson Singha, Maibam Sanju Meetei, "Study the Effect of Doping Concentration on the Performance of n-Type Poly-Si Cantilever Pressure Sensors," SSRG International Journal of Electrical and Electronics Engineering, vol. 13, no. 1, pp. 40-46, 2026. Crossref, https://doi.org/10.14445/23488379/IJEEE-V13I1P105
Abstract:
This study is to evaluate the performance of n-type Polycrystalline Silicon (poly-Si)-based piezoresistive pressure sensors with different doping concentrations. The two primary properties, i.e., mechanical and electrical properties, are the governing factors for the performance of the sensor. The variation in the doping concentrations changed the conductance of the majority charge carrier, which affects the piezoresistivity of the n-type poly-Si. This change in the piezoresistive properties changes the performance of the sensors. The poly-Si is widely used because of its compatibility with micromachining techniques, which make it suitable for Microelectromechanical Systems (MEMS). The investigation focuses on the influence of doping concentration on electron conductivity, which serves as the majority charge transport mechanism in n-type poly-Si and significantly affects the piezoresistivity of the sensor. The analytical model of the sensor is used to find the calculated values for comparative study with the simulated output values. The sensor models were simulated using COMSOL Multiphysics under applied pressures ranging from 0 to 100 kPa for different doping concentrations ranging from 1015 cm⁻³ to 1020 cm⁻³. The sensitivity and linearity are the two parameters of the sensors that are considered for evaluating the performance of the sensors. Both the conductance and the resistance of the sensors exhibit strong linear relationships with the applied pressure. Conductance increases with higher doping concentration and applied pressure with a positive slope, while resistance decreases under the same conditions. Furthermore, the resistance variation (output span) with pressure decreases as the doping concentration increases. Overall, higher doping concentrations enhance the conductivity but lead to a reduction in sensitivity. The sensor exhibits excellent linearity to input pressure with a negative gradient. The sensitivity of the calculated and simulated output values of the sensor for a doping concentration of 1015 cm⁻³ is 59 mΩ/kPa and 44 mΩ/kPa, respectively.
Keywords:
Conductance, Doping Concentration, Linearity, Mobility, Sensitivity.
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