Design and Simulation of HEMT Millimeter Wave Power Amplifier for 5G Applications

International Journal of Electrical and Electronics Engineering

© 2024 by SSRG - IJEEE Journal

Volume 11 Issue 4

Year of Publication : 2024

Authors : Aswini Kumar Gadige, Paramesha

10.14445/23488379/IJEEE-V11I4P106

How to Cite?

Aswini Kumar Gadige, Paramesha, "Design and Simulation of HEMT Millimeter Wave Power Amplifier for 5G Applications," SSRG International Journal of Electrical and Electronics Engineering, vol. 11,  no. 4, pp. 45-54, 2024. Crossref, https://doi.org/10.14445/23488379/IJEEE-V11I4P106

Abstract:

In terms of S parameters, rollet stability factor, stability measurement, and input/output impedance, 20 High Electron Mobility Microwave Transistors (HEMT) operating at millimeter wave frequency (30 GHz) are compared in this paper. Subsequently, a comparison of the performance of basic class E PA designed with these 20 HEMTs with respect to the number of parameters, including input and output reflection, forward and reverse transmission, power added efficiency, drain efficiency, gain, stability factor, and stability measurement, was conducted. The HEMT transistor, JS8911AS, is found to be a suitable device for designing the high gain millimeter wave power amplifier circuit for the 5G transmitter communication system at 30 GHz based on the comparison analysis. The proposed stacked power amplifier and two-way Doherty power amplifier are designed with a new self-biased parallel RLC power control circuit that addresses the problems of excess power dissipation and drain gate parasitic capacitance. The output power, gain, power added efficiency, and drain efficiency of the suggested Doherty power amplifier operating at 30 GHz were found to be 28.45 dBm, 21.47 dB, 79.34%, and 80%, respectively. Keysight ADS Simulation Tool is used for all Schematics and Simulations.

Keywords:

RF electronics, Analog electronics, Semiconductor devices, Power amplifier, 5G.

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