Reliability Evaluation of NLDMOS Transistor Based on Advanced Aging Test Including Hot Carrier Phenomenon

International Journal of Electronics and Communication Engineering
© 2022 by SSRG - IJECE Journal
Volume 9 Issue 8
Year of Publication : 2022
Authors : Mohamed Ali Belaid
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How to Cite?

Mohamed Ali Belaid, "Reliability Evaluation of NLDMOS Transistor Based on Advanced Aging Test Including Hot Carrier Phenomenon," SSRG International Journal of Electronics and Communication Engineering, vol. 9,  no. 8, pp. 1-7, 2022. Crossref, https://doi.org/10.14445/23488549/IJECE-V9I8P101

Abstract:

This manuscript treats the relative performance analysis of the hot carrier persuaded electrical behavior failure in RF power NLDMOS components afterward innovative procedures of accelerated aging tests under various conditions (electrical and thermal stress). The results show the performances shift for critical electrical parameters such as the Miller Crss capacitance and the Cgd gate-drain capacitance under various aging tests. To understand the parameter shift that appears during aging, we used a new electro-thermal perfect model executed by Agilent’s Advanced Design System (ADS) software as a reliability tool beneath form SDD, meaning Symbolic Defined Device, also with a physical numerical simulation (2D Silvaco-Atlas software) to prove qualitatively degradation phenomena, which are resulted through the generation of interface state also stuck electrons, then outcomes in a buildup at Si/SiO2 border of negative. charge.

Keywords:

Reliability, characterization, LDMOS, thermal effects, hot carrier phenomenon.

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