Study of Hot Carrier Degradation in N-Channel LDMOS Transistor Under Thermal Stress

International Journal of Electronics and Communication Engineering
© 2022 by SSRG - IJECE Journal
Volume 9 Issue 5
Year of Publication : 2022
Authors : Mohamed Ali Belaid
How to Cite?

Mohamed Ali Belaid, "Study of Hot Carrier Degradation in N-Channel LDMOS Transistor Under Thermal Stress," SSRG International Journal of Electronics and Communication Engineering, vol. 9,  no. 5, pp. 8-16, 2022. Crossref,


Thermal constraints, special in high-temperature levels, are the majority detected degradation phenomenon in Radio Frequency power devices. To assess the shift level, the focal sign results from the on-state resistor (RDSON) methodically related to the internal device structure evolution. This evaluates thermal constraints properties on currentvoltage behaviors of power RF N-LDMOS components, particularly of the RDSON. The resistor parameter, a principal restriction of the N-channel LDMOS components in the greatest temperature procedures, can partly or entirely modify the reliability of the physical and electrical components. RDS-on is highly dependent on temperature. The measurement characteristics significant to the thermal evaluation behavior of the component are described and confirmed through the elementary physical performance. The experimental results investigation is presented and used to study the physical aspect of temperature effects on N-channel LDMOS reliability. Physical quantities such as current lines, concentration, and mobility are considered depending on the temperature reliance. To finish, the study of the initial effects is presented and discussed.


Reliability, Characterization, LDMOS, Temperature effects, Hot carrier phenomenon.


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