New Generation of Innovative Power gating on Embedded Systems

International Journal of Electronics and Communication Engineering
© 2015 by SSRG - IJECE Journal
Volume 2 Issue 3
Year of Publication : 2015
Authors : K.Vinoth and V.M.Padmapriya
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How to Cite?

K.Vinoth and V.M.Padmapriya, "New Generation of Innovative Power gating on Embedded Systems," SSRG International Journal of Electronics and Communication Engineering, vol. 2,  no. 3, pp. 1-6, 2015. Crossref, https://doi.org/10.14445/23488549/IJECE-V2I3P105

Abstract:

Multithreshold CMOS power gating is very effective for reducing static leakage power during long periods of inactivity. Power-gating method was used to provide multiple poweroffmodes and reduce the leakage power during short periods ofinactivity. This scheme can suffer from high sensitivityto process variations of logic. Wepropose a new power-gating technique that is tolerant to processvariations and scalable to more than three intermediate power-offmodes. The proposed design requires less design effort and provide large power reduction and smaller area cost than the previousmethod. In addition, it will be combined with existing methods to offer further static power reduction. Analysis andextensive simulation results demonstrate the effectiveness of the proposed design

Keywords:

multi-mode power switches, power consumption reduction, process variation, reconfigurable power-gating structure

References:

[1] Semiconductor Industry Association. (2007) [Online]. Available: http://www.itrs.net/Links/2007ITRS/Home2007.htm
[2] D. Lackey, P. Zuchowski, T. Bednar, D. Stout, S. Gould, and J. Cohn, “Managing power and performance for system-on-chip designs using voltage islands,” in Proc. IEEE/ACM Int. Conf. Comput. Aided Design, Nov. 2002, pp. 195–202.
[3] R. Puri, D. Kung, and L. Stok, “Minimizing power with flexible voltage islands,” in Proc. IEEE Int. Symp. Circuits Syst., May 2005, pp. 21–24.
[4] R. Puri, L. Stok, J. Cohn, D. Kung, D. Pan, D. Sylvester, A. Shrivastava, and S. Kulkarni, “Pushing ASIC performance in a power envelope,” in Proc. Design Autom. Conf., Jun. 2003, pp. 788–793.
[5] K. Roy, S. Mukhopadhyay, and H. Mahmoodi-Meimand, “Leakage current mechanisms and leakage reduction techniques in deepsubmicrometer CMOS circuits,” Proc. IEEE, vol. 91, no. 2, pp. 305–327, Feb. 2003.
[6] S. Idgunji, “Case study of a low power MTCMOS based ARM926 SoC: Design, analysis and test challenges,” in Proc. IEEE Int. Test Conf., Oct. 2007, pp. 1–10.
[7] A. Abdollahi, F. Fallah, and M. Pedram, “Leakage current reduction in CMOS VLSI circuits by input vector control,” IEEE Trans. Very LargeScale Integr. (VLSI) Syst. vol. 12, no. 2, pp. 140–154, Feb. 2004.
[8] Y. Alkabani, T. Massey, F. Koushanfar, and M. Potkonjak, “Input vector control for post-silicon leakage current minimization in the presence of manufacturing variability,” in Proc. 45th ACM/IEEE Design Autom.Conf., Jun. 2008, pp. 606–609.
[9] K. Kim, Y.-B. Kim, M. Choi, and N. Park, “Leakage minimization technique for nanoscale CMOS VLSI,” IEEE Des. Test Comput. vol. 24, no. 4, pp. 322–330, Jul. 2007.
[10] S. Mukhopadhyay, C. Neau, R. Cakici, A. Agarwal, C. Kim, and K. Roy, “Gate leakage reduction for scaled devices using transistor stacking,” IEEE Trans. Very Large Scale Integr. (VLSI) Syst., vol. 11, no. 4, pp. 716–730, Aug. 2003.