Temperature Effects in a Power RF LDMOS Device Performance Due to Hot Carrier

International Journal of Electrical and Electronics Engineering
© 2022 by SSRG - IJEEE Journal
Volume 9 Issue 4
Year of Publication : 2022
Authors : Mohamed Ali Belaid
How to Cite?

Mohamed Ali Belaid, "Temperature Effects in a Power RF LDMOS Device Performance Due to Hot Carrier," SSRG International Journal of Electrical and Electronics Engineering, vol. 9,  no. 4, pp. 1-6, 2022. Crossref, https://doi.org/10.14445/23488379/IJEEE-V9I4P101


Thermal constraints special in high-temperature levels, is the most observed degradation mechanisms in power RF electronic devices. To evaluate the degradation level, the main indicator may be the measurement of on-state resistance (RDS-on), which is systematically associated with the evolution of the internal device structure. This evaluation of thermal constraint's effects on I-V characteristics of power RF N-LDMOS devices, especially of RDS-on resistance, is the main constraint of LDMOS devices in high-temperature operations that can partially or change the performances of physical and electrical devices. RDS-on is highly dependent on temperature. The parameters relevant to the temperature evaluation characterization of the device are reported and proven by the basic physical behavior. The experimental results analysis is presented and used to explain the physical preview of temperature impacts on power RF LDMOS performance. The physical parameters like current lines, concentration, and mobility are considered, following temperature dependence. Finally, initial impacts analysis is discussed.


Reliability, RDS-on resistance, Power RF LDMOS, Temperature effects, Hot carrier.


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