Temperature Effects in a Power RF LDMOS Device Performance Due to Hot Carrier
|International Journal of Electrical and Electronics Engineering|
|© 2022 by SSRG - IJEEE Journal|
|Volume 9 Issue 4|
|Year of Publication : 2022|
|Authors : Mohamed Ali Belaid|
How to Cite?
Mohamed Ali Belaid, "Temperature Effects in a Power RF LDMOS Device Performance Due to Hot Carrier," SSRG International Journal of Electrical and Electronics Engineering, vol. 9, no. 4, pp. 1-6, 2022. Crossref, https://doi.org/10.14445/23488379/IJEEE-V9I4P101
Thermal constraints special in high-temperature levels, is the most observed degradation mechanisms in power RF electronic devices. To evaluate the degradation level, the main indicator may be the measurement of on-state resistance (RDS-on), which is systematically associated with the evolution of the internal device structure. This evaluation of thermal constraint's effects on I-V characteristics of power RF N-LDMOS devices, especially of RDS-on resistance, is the main constraint of LDMOS devices in high-temperature operations that can partially or change the performances of physical and electrical devices. RDS-on is highly dependent on temperature. The parameters relevant to the temperature evaluation characterization of the device are reported and proven by the basic physical behavior. The experimental results analysis is presented and used to explain the physical preview of temperature impacts on power RF LDMOS performance. The physical parameters like current lines, concentration, and mobility are considered, following temperature dependence. Finally, initial impacts analysis is discussed.
Reliability, RDS-on resistance, Power RF LDMOS, Temperature effects, Hot carrier.
 Nayak P, Pramanick S.K, Rajashekara K, A High Temperature Gate Driver for Silicon Carbide MOSFET, IEEE Trans. Ind. Electron. (65) (2018) 1955–1964.
 M.A. Belaïd, K. Ketata, M. Gares, et al., Analysis and Simulation of Self-Heating Effects on RF LDMOS Devices, Proc. IEEE Conf. Simulation of Semiconductor Processes and Devices, SISPAD, Tokyo, Japan. (2005) 231–234.
 Parthasarathy Nayak, Sumit Kumar Pramanick, Kaushik Rajashekara, A High Temperature Gate Driver for Silicon Carbide MOSFET, IEEE Transactions on Industrial Electronics. (65) (2018) 1955 – 1964.
 Product News from Philips Semiconductors, LDMOS Devices to Boost Base Station Efficiency. 7 (2003).
 Pedro J. Escalona-Cruz, Manuel A. Jimenez-Cedeno, Automated RDSon Characterization for Power MOSFETS, IEEE Conf. Latin American Symposium on Circuits & Systems (LASCAS), Montetevideo, Uruguay. (2015) 1-4.
 Nasser Badawi, Oliver Hilt, Eldad Bahat-Treidel, Investigation of the Dynamic On-State Resistance of 600 V Normally-Off and Normally-on GaN HEMTs, IEEE Transactions on Industry applications. (52) (2016) 4955-4964.
 M. Saremi, M. Saremi, H. Niazi, M. Saremi and A. Yazdanpanah, SOI LDMOSFET with Up and Down Extended Stepped Drift Region, Journal of Electronic Materials. (46) (2017) 5570-5576.
 Ali A. Orouji, S.E. Jamali Mahabadi, P. Keshavarzi, A Novel Partial SOI LDMOSFET with a Trench and Buried Player for Breakdown Voltage Improvement, Microelectronic Reliability. (50) (2011) 449-460.
 Li-Sheng Wang, Jing-Ping Xu, Lu Liu, et al., Influences of Remote Coulomb and Interface-Roughness Scatterings on Electron Mobility of InGaAs nMOSFET with High-k Stacked Gate Dielectric, IEEE Transactions on Nanotechnology. (2015) 854–861.
 I. Cortes, J. Roig, D. Flores, J. Urresti, S. Hidalgo, Analysis of Hot-Carrier Degradation in a SOI LDMOS Transistor with a Steep Retrograde Drift Doping Profile, Elsevier Microelectronics Reliability. (45) (2004) 493-498.
 Ph. Kouakou, Physical Study of Nonlinearities in Radio Frequency MOS Transistors, Ph.D. Thesis, University Paul Sabatier of Toulouse. (1999).
 C. Ying, h. Zhou, H. Mo, et al. Optimization of RF Performance and Reliability of 28v Rf-Ldmos, IEEE Conf. China Semiconductor Technology International Conference, CSTIC, Shanghai, China. (2019) 19-23.
 G. Groesenken et al., The Temperature Dependence of Threshold Voltage in Thin-Film SO1 MOSFET's, IEEE Electron Device Lett. (11) (1990) 329-332.
 M. Miller, T. Dinh, E. Shumate, A New Empirical Large Signal Model for Silicon RF LDMOSFET's, IEEE MTT-S Technol. Wireless Application, Dig. (1997) 19-22.
 M.A. Belaïd, K. Ketata, M. Gares, M. Masmoudi, J. Marcon, Reliability Study of Power RF LDMOS Device Under Thermal Stress, Microelectr. Journal. (38) (2006) 164–170.
 Siyang Liu, Sheng Li, Zhichao Li, et al., Lateral DMOS with Partial-resist-implanted Drift Region for Alleviating Hot-carrier Effect, IEEE Transactions on Device and Materials Reliability. (99) (2017) 780-784.
 Chien-Yu Lin, Ting-Chang Chang, Kuan-Ju Liu, Analysis of Contrasting Degradation Behaviors in Channel and Drift Regions Under Hot Carrier Stress in PDSOI LD N-Channel MOSFETs, IEEE Electron Device Letters. (38) (2017) 705-707.