Design of a Normally-off HEMT using Double Quantum Well Structure with Improved Breakdown Characteristics

International Journal of Electrical and Electronics Engineering
© 2022 by SSRG - IJEEE Journal
Volume 9 Issue 11
Year of Publication : 2022
Authors : Jayati Routh, Sanjay Kr. Jana
How to Cite?

Jayati Routh, Sanjay Kr. Jana, "Design of a Normally-off HEMT using Double Quantum Well Structure with Improved Breakdown Characteristics," SSRG International Journal of Electrical and Electronics Engineering, vol. 9,  no. 11, pp. 17-24, 2022. Crossref,


HEMT "High Electron Mobility Transistor" is very suitable for emerging power devices because of its high saturation drain current, high breakdown voltage, and low on-resistance (Ron). Although normally-off operation (enhancement mode) is frequently preferred for fail-safe operation and ease of design, ordinary AlGaN/GaN heterostructures are, by nature, generally ON devices. A HEMT should be a normally-off device, where the channel will not conduct without any gate bias for reasons of safety and power-saving in the OFF mode. However, one of the most important problems in normally-off devices to be resolved is current collapse, also known as enhanced dynamic Ron or drain current dispersion. The reasons for the present collapse and how to reverse it remains crucially vital even if growth and gadget technologies have significantly improved. This work examines an Al0.2Ga0.8N/GaN/Al0.25Ga0.75N/In0.15Ga0.85N/GaN normally-off HEMT that employs a double quantum well. A fieldplated device with a SiN passivation layer was investigated for reducing current collapse and increasing the breakdown voltage.


Breakdown voltage, GaN, HEMT, InAiN, Normally-off, Passivation, Threshold voltage, Trapping.


[1] U. K. Mishra, P. Parikh, and Y. F. Wu, "AlGaN/GaN HEMTs-An overview of Device Operation and Applications," in Proceedings of the IEEE, vol. 90, no. 6, pp. 1022-1031, 2002. Crossref,
[2] K. Joshin, T. Kikkawa, H. Hayashi, S. Yokogawa, M. Yokoyama, N. Adachi and M. Takikawa, “A 174W High-Efficiency GaN HEMT Power Amplifier for W-CDMA base Station Applications," IEEE International Electron Devices Meeting, pp. 12.6.1- 12.6.3, 2003. Crossref,
[3] G. Li, T. Zimmermann, Y. Cao, C. Lian, X. Xing, R. Wang, P. Fay, H. Xing, and D. Jena, "Threshold Voltage Control in Al0.72Ga0.28N/AlN/GaN HEMTs by Work-Function Engineering," IEEE Electron Device Letters, vol. 31, no. 9, pp. 954–956, 2010. Crossref,
[4] Y. Cai, Y. G. Zhou, K. J. Chen and K. M. Lau, "High-Performance Enhancement-Mode Algan/Gan Hemts using Fluoride-Based Plasma Treatment," IEEE Electron Device Letters, vol. 26, no. 7, pp. 435–437, 2005. Crossref,
[5] M. Kanamura, T. Kikkawa and K. Joshin, "A 100-W High-Gain AlGaN/GaN HEMT Power Amplifier on a Conductive N-Sic Substratefor Wireless Base Station Applications," IEDM Technical Digest, IEEE International Electron Devices Meetin, pp. 799- 802, 2004. Crossref,
[6] Sumit Verma, Sajad A. Loan and Abdullah G. Alharbi, “Polarization Engineered Enhancement Mode GaN HEMT: Design and Investigation,” Superlattices and Microstructures, vol. 119, pp. 181-193, 2018. Crossref,
[7] Chen K.J and Zhou C, “Enhancement-Mode Algan/Gan HEMT and MIS-HEMT Technology,” Physica Status Solidi, vol. 208, pp. 434–438, 2011. Crossref,
[8] Jie Liu, Yugang Zhou, Jia Zhu, K. M. Lau and K. J. Chen, "AlGaN/GaN/InGaN/GaN DH-HEMTs with an InGaN notch for Enhanced Carrier Confinement,” IEEE Electron Device Letters, vol. 27, no. 1, pp. 10-12, 2006. Crossref,
[9] Shadab Soomro, Muhammad Rafique, Farzana R. Abro and Mukhtiar Ali Unar, "Computational Investigations on Opto-Electronic Properties of Carbon (C) Atom Doped Monolayer Aln Systems Using Ab-Initio Method," SSRG International Journal of Material Science and Engineering, vol. 5, no. 2, pp. 7-12, 2019. Crossref,
[10] Kumar V, Kuliev A, Tanaka T, Otoki Y and Adesida I, “High Transconductance Enhancement-Mode AlGaN/GaN HEMTs on SiC Substrate,” Electronics Letters, vol. 39, no. 24, pp. 1758-1760, 2003. Crossref,
[11] Cai Y, Zhou Y, Lau K.M and Chen K.J, “Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode,” EEE Transactions on Electron Devices, vol. 53, no. 9, pp. 2207-2215, 2006. Crossref,
[12] Zhang Y, Sun M, Joglekar S.J, Fujishima T and Palacios T, “Threshold Voltage Control by Gate Oxide Thickness in Fluorinated GaN Metal-Oxide Semiconductor High-Electron-Mobility Transistors,” Applied Physics Letters, vol. 103, no. 3, pp. 033524, 2013. Crossref,
[13] Efthymiou L, Longobardi G, Camuso G, Chien T, Chen M and Udrea F, “On the Physical Operation and Optimization of the PGan Gate in Normally-Off Gan HEMT Devices,” Applied Physics Letter, vol. 110, pp. 123502, 2017. Crossref,
[14] Ankush Bag, Palash Das, Rahul Kumar, Partha Mukhopadhyay, Shubhankar Majumder, Sanjib Kabi and Dhrubes Biswas, “2 Deg Modulation in Double Quantum Well Enhancement Mode Nitride Hemt,” Physica E: Low-Dimensional Systems and Nanostructures, vol. 74, pp. 59-64, 2015. Crossref,
[15] R. Vetury, N. Q. Zhang, S. Keller, and U. K. Mishra, "The Impact of Surface States on the DC and RF Characteristics of AlGaN/GaN HFETs," IEEE Transition Electron Devices, vol. 48, no. 3, pp. 560–566, 2001. Crossref,
[16] D. Jin and J. A. del Alamo, "Methodology for the Study of Dynamic ON-Resistance in High-Voltage GaN Field-Effect Transistors," IEEE Transactions on Electron Devices, vol. 60, no. 10, pp. 3190-3196, 2013. Crossref,
[17] G. Yu, Y. Wang, Y. Cai, Z. Dong, C. Zeng and B. Zhang, "Dynamic Characterizations of AlGaN/GaN HEMTs with Field Plates Using a Double-Gate Structure," IEEE Electron Device Letters, vol. 34, no. 2, pp. 217-219, 2013. Crossref,
[18] D. Jin and J. A. del Alamo, "Mechanisms responsible for dynamic ON-resistance in GaN high-voltage HEMTs," 24th International Symposium on Power Semiconductor Devices and ICs, pp. 333-336, 2012. Crossref, 
[19] Karmalkar S and U.K. Mishra, "Enhancement of Breakdown Voltage in AlGaN/GaN High Electron Mobility Transistors Using a Field Plate," IEEE Transactions on Electron Devices, vol. 48, no. 8, pp. 1515-1521, 2001. Crossref,
[20] Xia X, Guo Z and Sun H, “Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage,” Micromachines, vol. 12, pp. 1318, 2021. Crossref,
[21] Q. Hu, F. Zeng, W. C. Cheng, G. Zhou, Q. Wang and H. Yu, "Reducing Dynamic on-Resistance of P-Gan Gate Hemts Using Dual Field Plate Configurations," 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), pp. 1-4, 2020. Crossref,
[22] Fanming Zeng, Qing Wang, Shuxun Lin, Liang Wang, Guangnan Zhou, Wei-Chih Cheng, Minghao He, Yang Jiang, Qi Ge, Ming Li and Hongyu Yu, “Study on the Optimization of Off-State Breakdown Performance of p-GaN HEMTs," 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), pp. 1-4, 2020. Crossref, 10.1109/EDTM47692.2020.9117814
[23] R. Vetury, N.Q. Zhang, S. Keller and U.K. Mishra, "The Impact of Surface States on the DC and RF Characteristics of AlGaN/GaN HFETs," IEEE Transactions on Electron Devices, vol. 48, no. 3, pp. 560-566, 2001. Crossref,
[24] Saito W, Takada Y, Kuraguchi M, Tsuda K and Omura I, “Recessed-Gate Structure Approach Toward Normally Off High-Voltage Algan/Gan HEMT for Power Electronics Applications,” IEEE Electron Device Letters, vol. 53, no. 2, pp. 356-362, 2006. Crossref,